NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
100
90
5.5 V to 10 V
4.5 V
T J = 25 ° C
80
70
V DS ≥ 10 V
80
70
60
60
50
40
4V
3.8 V
3.6 V
50
40
30
30
20
10
0
0
1
2
3
4
3.4 V
3.2 V
3V
5
20
10
0
1
T J = 125 ° C
T J = 25 ° C
2 3
T J = ? 55 ° C
4
5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
9.6
9.2
8.8
8.4
8.0
7.6
7.2
6.8
6.4
I D = 30 A
T J = 25 ° C
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
T J = 25 ° C
V GS = 4.5 V
V GS = 11.5 V
6.0
5 5.5
6
6.5
7 7.5 8
8.5
9 9.5 10 10.5 11 11.5
0
10
15
20
25
30
35
40
45
50
55
60
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
1.6
1.5
1.4
1.3
I D = 30 A
V GS = 10 V
10000
1000
100
V GS = 0 V
T J = 150 ° C
T J = 125 ° C
1.2
1.1
1.0
10
0.9
0.8
0.7
1
T J = 25 ° C
0.6
? 50 ? 25
0
25
50
75
100
125
150
175
0.1
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
相关PDF资料
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相关代理商/技术参数
NTD4808N-35G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4808NT4G 功能描述:MOSFET NFET 30V 63A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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NTD4809N-35G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4809N-35H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
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NTD4809NA-35G 功能描述:MOSFET NFET 30V 58A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube